CARBORUNDUM BOILING CHIPS 4 MESH
Silicon Carbide (Black)
CAS: 409-21-2
Molecular Formula: CSi
CARBORUNDUM BOILING CHIPS 4 MESH - Names and Identifiers
| Name | Silicon Carbide (Black) |
| Synonyms | carborun Silicon carbide Silicon Carbide (Black) silicon carbide, needles CARBORUNDUM BOILING CHIPS 4 MESH CARBORUNDUM BOILING CHIPS 14 MESH CARBORUNDUM BOILING CHIPS 20 MESH silicon carbide, 400 grinding compound, 2oz silicon carbide, 600 grinding compound, 2oz |
| CAS | 409-21-2 |
| EINECS | 206-991-8 |
| InChI | InChI=1/C.Si/q+4;-4 |
| InChIKey | HBMJWWWQQXIZIP-UHFFFAOYSA-N |
CARBORUNDUM BOILING CHIPS 4 MESH - Physico-chemical Properties
| Molecular Formula | CSi |
| Molar Mass | 40.1 |
| Density | 3.22 g/mL at 25 °C (lit.) |
| Melting Point | 2700 °C (lit.) |
| Boling Point | 2700℃ |
| Water Solubility | Soluble in molten alkalis (NaOH, KOH) and molten iron. Insoluble in water. |
| Solubility | Soluble in molten sodium hydroxide, potassium hydroxide and in molten iron. |
| Appearance | Green or blue black crystals |
| Specific Gravity | 3.22 |
| Color | Green |
| Exposure Limit | ACGIH: TWA 10 mg/m3; TWA 3 mg/m3; TWA 0.1 fiber/cm3OSHA: TWA 15 mg/m3; TWA 5 mg/m3NIOSH: TWA 10 mg/m3; TWA 5 mg/m3 |
| Merck | 14,8492 |
| Storage Condition | Room Temprature |
| Stability | Stability |
| Sensitive | 1: no significant reaction with aqueous systems |
| Refractive Index | 2.6500 |
| MDL | MFCD00049531 |
| Physical and Chemical Properties | Light yellow transparent tetragonal crystal. Melting point 2700 °c. The relative density was 3.217. Soluble in molten potassium hydroxide, insoluble in cold, hot water and acid. The crystal structure is regular, has good chemical inertness, and has good tolerance to oxidation and thermal fluctuation. Has a low coefficient of expansion and a high coefficient of heat transfer. The experimental results show that the free silicon in the gas phase of the solid surface of silicon carbide is only 5% at the high temperature of 2300. And with high hardness and semiconductor. |
| Use | It is suitable for the manufacture of silicon carbide abrasive tools, ceramic kiln furniture and refractory materials for various purposes. |
CARBORUNDUM BOILING CHIPS 4 MESH - Risk and Safety
| Hazard Symbols | Xi - Irritant |
| Risk Codes | 36/37/38 - Irritating to eyes, respiratory system and skin. |
| Safety Description | S26 - In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. S36 - Wear suitable protective clothing. |
| WGK Germany | 3 |
| RTECS | VW0450000 |
| TSCA | Yes |
| HS Code | 28492000 |
CARBORUNDUM BOILING CHIPS 4 MESH - Upstream Downstream Industry
| Raw Materials | Silicon dioxide |
CARBORUNDUM BOILING CHIPS 4 MESH - Nature
Open Data Verified Data
high purity silicon carbide is a colorless transparent crystalline or amorphous powder, silicon carbide containing impurities is green, and carbon and metal oxide impurities in solid solution are black. Decomposition occurs at 2500 °c at atmospheric pressure. The relative density is 3.20~3. 25, the dielectric constant is 7.0, and the resistivity is 102M.cm at room temperature. The hardness of silicon carbide is very high, Mohs hardness is 9.2~9.5, but slightly lower than diamond, cubic boron nitride and other substances. The thermal conductivity of silicon carbide is very high, about 2 times that of silicon nitride; Its thermal expansion coefficient is about half that of aluminum oxide; The bending strength is close to that of silicon nitride material, but the fracture toughness is smaller than that of silicon nitride. Insoluble in water and common acids. It has good chemical stability and chemical inertness. Do not react with the mixed acid of hydrofluoric acid and nitric acid; Contact with molten alkali metal will slowly decompose into carbonate and silicate, and heat will react with the mixture of potassium dichromate and lead chromate. It has excellent high temperature strength and high temperature creep resistance. The high temperature bending strength of hot pressed silicon carbide at 1600 C is basically the same as that at room temperature.
Last Update：2024-01-02 23:10:35
CARBORUNDUM BOILING CHIPS 4 MESH - Preparation Method
Open Data Verified Data
The silica reduction method was used. The high-purity silica stone and petroleum coke are mixed and made into a granular form of 10mm or less, put into an indirect resistance furnace, and heated for 10-30H, and reacted at 1800-1900 ° C., and the SiC formed by the reaction will be decomposed when the temperature exceeds 2000 ° C. After completion of the energization, the reaction was completed, and the resultant silicon carbide was cooled, crushed, pulverized, and washed with water to obtain a granular product.
Last Update：2022-01-01 09:05:51
CARBORUNDUM BOILING CHIPS 4 MESH - Introduction
Silicon carbide is divided into black silicon carbide and green silicon carbide, soluble in molten alkali and molten iron, insoluble in water, ethanol and acid. It's irritating. The microhardness is 2840~3320kg/mm2. It has excellent thermal conductivity. Sublimation and decomposition at 2700 ℃.
Last Update：2022-10-16 17:25:08
CARBORUNDUM BOILING CHIPS 4 MESH - Use
Open Data Verified Data
as a functional ceramic, refractory, abrasive and metallurgical raw materials. Used in the manufacture of abrasive tools, such as grinding wheel, stone, grinding head, sand, etc., used as a metallurgical Deoxidizer. High-purity silicon carbide may be used in the fabrication of semiconductors, silicon carbide fibers, and the like.
Last Update：2022-01-01 09:05:51
CARBORUNDUM BOILING CHIPS 4 MESH - Safety
Open Data Verified Data
inhalation of silicon carbide dust can deposit in the lungs, leading to lung disease. Staff should be protected. The maximum allowable concentration is 10 mg/m3. This product should be stored in a cool, dry, ventilated warehouse, not with inorganic acid, alkali co-Storage Co-transport.
Last Update：2022-01-01 09:05:51
CARBORUNDUM BOILING CHIPS 4 MESH - Reference Information
| crystal structure | Cubic, Sphalerite Structure - Space Group F(-4)3m |
| (IARC) carcinogen classification | 2A (Vol. 111) 2017 |
| NIST chemical information | Information provided by: webbook.nist.gov (external link) |
| EPA chemical information | Information provided by: ofmpub.epa.gov (external link) |
| introduction | silicon carbide is commonly known as emery, gem name drill pith, is a ceramic compound formed by bonding silicon and carbon. silicon carbide exists in nature in the form of moissanite, a rare mineral. Since 1893, silicon carbide powder has been widely used as an abrasive. Sintering silicon carbide powders yields hard ceramic-like silicon carbide particles, which can be used in materials that require high durability, such as automotive brake pads, clutches, and bulletproof vests, and are also used in the manufacture of electronic devices such as light-emitting diodes, early radio detectors, and the like. Nowadays, silicon carbide is widely used in the manufacture of high temperature and high pressure semiconductors. |
| Non-metallic carbide | Silicon carbide is a non-metallic carbide that is covalently bonded to silicon and carbon. Its hardness is second only to diamond and boron carbide. The chemical formula is SiC. Colorless crystal, blue-black when the surface is oxidized or containing impurities. The silicon carbide variant with a diamond structure is commonly known as emery. The hardness of emery is close to that of diamond and has good thermal stability. It changes from β-silicon carbide to α-silicon carbide at 2127 ℃, and α-silicon carbide is still stable at 2400 ℃. It is stable to hydrofluoric acid aqueous solution and concentrated sulfuric acid, and is unstable to mixed acid or phosphoric acid of concentrated hydrofluoric acid and nitric acid. It is decomposed by molten alkali in an empty atmosphere. It is divided into synthetic silicon carbide and natural silicon carbide. Natural silicon carbide is called carbon silica, which mainly occurs in kimberlite and volcanic amphibolite, but its quantity is very small and has no mining value. industrial silicon carbide is artificial silicon carbide with SiC content of 95% ~ 99.5%, often containing a small amount of free carbon and impurities such as Fe2O3, Si and SiO2. Silicon carbide can be divided into hexagonal crystal system (α-SiC) and cubic crystal system (β-SiC) according to the crystal type. The hexagonal crystal system has the crystal form of hexagonal unit cell (2H, 4H, 6H... etc.) and the crystal form of rhombic unit cell (15R, 21R, 27R... etc.). There are more than 100 homogeneous polycrystalline structures of silicon carbide. Industrial silicon carbide is a mixture of α-SiC and β-SiC, and its colors are black and green. Pure silicon carbide is colorless and transparent, and is black, green, blue and yellow when containing impurities. Hexagonal and cubic crystal system, the crystal is plate-shaped, complex tripartite columnar. It has glass luster, density 3.17~3.47g/cm3, Mohs hardness 9.2, microhardness 30380 ~ 33320MPa; Melting point: it starts to decompose at 2050 ℃ in the atmosphere and begins to decompose at 2600 ℃ in the reducing atmosphere; The elastic modulus is 466 and 480MPa; The tensile strength is 171.5MPa; The compressive strength is 1029MPa; The linear expansion coefficient is (25~1000 ℃)5.0 × 10-6/℃; the thermal conductivity (20 degrees C) is 59W/(m-K). The chemical properties are stable, and boiling in HCl, H2SO4 and HF is not etched, but it starts to decompose at 230 ℃ in concentrated H3PO4. fig. 1 shows the reaction of silicon carbide with various gases and chemicals silicon carbide can be used as grinding material, refractory material, resistance heating element and deoxidizer, etc. In the refractory industry, silicon carbide is used to produce various silicon carbide bricks, and can also be used as an additive or antioxidant. |
| Discovery history | Silicon carbide is a carbide accidentally discovered by American engineer E.G.Acheson during the electrofusion of diamond in 1891. At that time, it was mistaken for a compound with corundum, named emery. In 1893, Acheson developed an industrial method for manufacturing silicon carbide. A resistance furnace with a carbonaceous material as the furnace core was energized to heat a mixture of SiO2 and carbon to react to generate silicon carbide. Patent 492767). |
| classification and classification | silicon carbide can be divided into different categories according to different colors, uses and structures. Pure silicon carbide is a colorless and transparent crystal. Industrial silicon carbide is colorless, light yellow, light green, dark green or light blue, dark blue and even black. The abrasive industry divides silicon carbide into black silicon carbide and green silicon carbide according to color, of which colorless until dark green are classified as green silicon carbide; light blue to black is classified as black silicon carbide. The cause of polychromatic silicon carbide is related to the presence of various impurities. Industrial silicon carbide usually contains about 2% of various impurities, mainly silicon dioxide, silicon, iron, aluminum, calcium, magnesium, carbon, etc. When there is more carbon in the crystal, the crystal is black. Green silicon carbide is brittle, black silicon carbide is tougher, the former has slightly higher grinding ability than the latter. According to the particle size, the products are divided into different grades. China's abrasive industry stipulates that black silicon carbide has 17 grades. Green silicon carbide has 21 particle size grades. No. 80 and above abrasives are called abrasive particles, and 100~280 abrasives are called abrasive powder. According to different uses: silicon carbide is divided into abrasive, refractory, deoxidizer, electrical silicon carbide, etc. The SiC content of silicon carbide for abrasives should be above 98%. Silicon carbide for refractory materials is further divided into (1) black silicon carbide, a high-grade refractory material, whose SiC content is exactly the same as that for abrasive silicon carbide;(2) black silicon carbide, a secondary refractory material, has a SiC content greater than 90%;(3) Black silicon carbide, a low-grade refractory material, has a SiC content greater than 83%. Silicon carbide for deoxidizer, SiC content is generally required to be greater than 90%. However, the treatment with silicon carbide content greater than 45% in the heat preservation material of the graphitization furnace in the carbon industry can also be used as a deoxidizer for steelmaking. There are two types of silicon carbide for deoxidizer: powder and molded block. Powdered deoxidizer black silicon carbide usually has two particle sizes of 4~0.5mm and 0.5~0.1mm. There are two main types of silicon carbide for electrical engineering:(1) Green silicon carbide for electric heating elements, which is exactly the same as green silicon carbide for abrasives. (2) Silicon carbide for lightning arresters has special electrical performance requirements, which are different from black silicon carbide for refractory materials for abrasives. |
| uses of silicon carbide | silicon carbide products have special properties such as high temperature resistance, wear resistance, heat shock resistance, chemical corrosion resistance, radiation resistance, good electrical conductivity, thermal conductivity, etc., so they have a wide range of uses in various sectors of the national economy. In China, green silicon carbide is mainly used as abrasive. Black silicon carbide is used to make abrasive tools. It is mostly used for cutting and grinding materials with low tensile strength, such as glass, ceramics, stone and refractory materials. It is also used for grinding cast iron parts and non-ferrous metal materials. Abrasive tools made of green silicon carbide are mostly used for grinding hard alloy, titanium alloy and optical glass, as well as for honing cylinder liners and fine grinding of high-speed steel tools. Cubic silicon carbide abrasive tools are specially used for ultra-fine grinding of miniature bearings. Applying silicon carbide micropowder to the impeller of the water turbine by electroplating method can greatly improve the wear resistance of the impeller; using mechanical pressure to press the cube SiC200 grinding powder and W28 micropowder into the cylinder wall of the internal combustion engine, which can extend the life of the cylinder body More than double. In the electrical industry, silicon carbide can be used as arrester valve body, silicon carbon electric heating element, far infrared generator, etc. In the electronics industry, such as in the industrial silicon carbide furnace or in the industrial furnace by special methods to cultivate a large and complete silicon carbide single crystal, can be used as a light-emitting diode (such as crystal lamp, digital tube lamp) substrate; high purity silicon carbide crystal is a high-quality material for the production of radiation-resistant high-temperature semiconductors. Silicon carbide is one of the few semiconductor materials with large band gap (2.86eV) and P and N conductivity types. In the aerospace industry, gas filters and combustion chamber nozzles made of silicon carbide have been used in rocket technology. The silicon carbide fiber, which has been industrialized, is a new type of high-strength, high-modulus material with excellent heat resistance and oxidation resistance, and good compatibility with metals and resins. The service temperature can reach 1200 ℃, and the strength retention rate can reach more than 80% at high temperature. It can be used to make heat shielding materials, high temperature resistant conveyor belts, filter cloth for filtering high temperature gas or molten metal, and can also be used as reinforcing materials for reinforcing metals and ceramics in combination with carbon fiber or glass fiber. low-grade silicon carbide can be used as steel-making deoxidizer and cast iron additive. In the carbon industry, silicon carbide is mainly used to produce bricks for ironmaking blast furnaces, such as graphite silicon carbide and silicon carbide bricks combined with silicon nitride. In the production of graphite electrodes, silicon carbide is also used as the ingredient of the coating refractory sintered material of the oxidation-resistant coating electrode to increase the tolerance of the coating to sharp changes in temperature. In the manufacture of special carbon materials-biochar, propane and trichloromethyl silane are often used as gas raw materials. After high-temperature pyrolysis reaction, silicon-containing pyrolytic carbon coating is deposited on the graphite substrate to increase The hardness, strength and wear resistance of the product. The silicon carbide in the coating exists as the crystal form of β-SiC with a grain size of about 1 μm. Biocarbon products manufactured by this method, such as silicon-containing pyrolytic carbon artificial heart valves, have good biocompatibility. |
| silicon carbide ceramics | silicon carbide ceramics are the ceramic materials with the highest strength at high temperatures and are ceramic materials with silicon carbide as the main component. Silicon carbide is a typical covalent bond compound. The unit cell is composed of the same silicon-carbon tetrahedron. The silicon atom is in the center and surrounded by carbon. There are two main crystal forms: α type, high temperature type, hexagonal structure; β type, low temperature type, cubic structure. Natural silicon carbide is almost non-existent and often requires artificial synthesis. The synthesis methods of silicon carbide powder mainly include: ① carbothermal reduction method, SiO2 + 3C → SiC + 2CO ↑; (2) thermal decomposition of silane by high-frequency plasma or laser; (3) sol-gel method using metal organic compounds, etc. the preparation methods of silicon carbide ceramics mainly include normal pressure sintering, hot pressing sintering, reaction sintering and high temperature isostatic pressing sintering. Silicon carbide ceramic films can be prepared by chemical vapor deposition (CVD). To improve the sintering density of silicon carbide ceramics, a certain amount of B, C, B4C, Al2O3, AlN, BeO and Al can be added as sintering additives. Silicon carbide is a compound with strong covalent bonds. It is difficult to completely densify it under normal pressure, and only silicon carbide ceramics with 95% theoretical density can be obtained. High density silicon carbide ceramics can be prepared by hot pressing sintering and high temperature isostatic pressing sintering. The sintering temperature is 1950~2100 ℃, the product performance is good, it is difficult to manufacture products with complex shapes, and the cost is high. Reaction sintering is composed of α-SiC and graphite powder mixed and pressed into a green body according to a certain proportion, and heated to react with molten liquid Si or gas phase Si to generate β-SiC. The sintering temperature is low (1400~1600 ℃), which can produce products with complex shapes. The disadvantage is that 8% ~ 20% free silicon remains in the green body, which limits its high-temperature mechanical properties and its application in strong acid and alkali. SiC ceramics not only have high room temperature strength, corrosion resistance, wear resistance and low friction coefficient, but also have high high temperature strength and creep resistance. The use temperature can reach 1600 ℃. It is the best material for high temperature oxidation resistance and strength among the currently known ceramic materials. The disadvantages are large brittleness and low fracture toughness. The use of fibers, whiskers and particles can toughen and reinforce SiC ceramics, which obviously improves the toughness and strength of SiC ceramics. It can be widely used in petroleum, chemical, automotive, aerospace, electronics, atomic energy and other fields, as high temperature resistance, wear resistance, corrosion resistance, sealing, electronic packaging and other materials. |
| toxicity | silicon carbide production needs high temperature operation, and measures such as preventing burns and heatstroke prevention and cooling should be paid attention. In addition, silicon carbide powder is an inert powder with stable chemical properties and high hardness. It is inhaled into the lungs and deposited in the lungs to cause lung diseases. High concentration powder causes pneumoconiosis, dust protection should be paid attention. seal the mouth with polyethylene plastic bag and pack it with polypropylene woven bag, each bag has a net weight of 25 kg. Store in a cool, ventilated and dry warehouse. Do not store and mix with inorganic acids and alkalis. During transportation, rain should be prevented. When handling, it should be lightly loaded and unloaded to prevent packaging damage. In case of fire, water, dry sand and carbon dioxide fire extinguisher can be put out. Toxicity and protection Inhalation of silicon carbide dust is deposited in the lungs and causes lung diseases. Staff should wear full-body protective clothing and related labor protection articles to prevent dust inhalation. |
| recrystallized silicon carbide products | recrystallized silicon carbide products are refractory products made of silicon carbide and directly combined with silicon carbide. Its characteristic is that there is no second phase and it is composed of 100% α-SiC. It is a new energy-saving kiln furniture material developed in the 1980 s. figure 2 shows the performance of recrystallized silicon carbide brick recrystallized silicon carbide brick has the characteristics of high temperature strength, good thermal conductivity, good thermal shock resistance, strong corrosion resistance of slag and molten steel, and high wear resistance. Used in blast furnace belly lining, hot metal pretreatment car lining, dry-out coke tower lining, ceramic industry kiln brick and zinc smelting distillation tank lining. recrystallized silicon carbide brick is made of high purity silicon carbide (SiC ≥ 99%) as raw material, adopts wet ultra-fine grinding powder slurry adjustment and pouring process, and is fired at ultra-high temperature. Therefore, this kind of brick has higher high temperature fracture strength and oxidation resistance than silicon nitride bonded silicon carbide brick. The fine powder of high purity raw materials is pickled first to remove the oxide film impurities on the surface. After adding surfactant, wet fine grinding is adopted, and additives are added to adjust the viscosity of the mud. The viscosity is generally controlled between 0.1 and 0.15Pa · s. The mud is injected with micro-pressure, which can improve the relative density of the blank. A special high-frequency electric furnace is used for firing. The furnace is filled with argon as protective gas. The gas pressure is controlled at 0.1~0.25MPa and the firing temperature is 2000~2400 ℃. fig. 3 is the process flow chart of recrystallized silicon carbide brick the main points of the manufacturing process of recrystallized silicon carbide brick:(1) the gradation must reach the maximum stacking density, and the mud forming pressure must ensure the large volume density. (2) The firing must be carried out in an electric furnace with a high temperature of 2500 ℃ isolated from the air. When the temperature is above 2100 ℃, SiC undergoes evaporation and condensation, resulting in a self-bonding structure without shrinkage. recrystallized silicon carbide products are mainly used as kiln furniture. It has the advantages of energy saving, increasing the effective volume of the kiln, shortening the firing cycle, improving the production efficiency of the kiln, and high economic benefits. It can also be used as a burner nozzle nozzle, ceramic radiant heating Tube, component protection tube (especially for atmosphere furnace), etc. |
| usage | due to its high thermal stability, high strength, high thermal conductivity and other characteristics, it is widely used in atomic energy materials, chemical devices, high temperature treatment, electric heating components and resistors, etc. Used for abrasives, abrasive tools, advanced refractory materials, fine ceramics. Used for abrasives, wear-resistant agents, abrasive tools, high-grade refractory materials, fine ceramics. suitable for manufacturing silicon carbide abrasive tools, ceramic kiln furniture and refractory materials for various purposes used for abrasive tools, advanced refractory materials, fine ceramics, etc. used as reinforcing fibers for composite materials such as resins and metals, and can also be used as radio wave absorbing materials and heat-resistant materials. Used as a reinforcing material for composite materials, it plays an equal directional enhancement role. Composite materials composed of plastics, metals, and ceramics can improve various characteristics. It can form a composite material with thermoplastic and thermosetting resins, which significantly improves the strength, elastic modulus, thermal conductivity, and wear resistance of the plastic. Adding 15% silicon carbide whiskers to PEEK increases the thermal conductivity by about 2 times, and the flexural strength of polyimide strengthened with 20% silicon carbide increases by about 2 times at normal temperature, which is the same as that not strengthened at normal temperature at 250 ℃. When 15% silicon carbide is added to epoxy resin, the wear amount decreases by 17%. Abrasive. High temperature resistant materials. Manufacture of high-purity single crystals and semiconductors. |
| production method | carbon reduction silicon raw material (silica or elemental silicon) is mixed with carbon raw material (carbon black), and heated in a non-oxidizing atmosphere at 1300~1800 ℃ for reduction reaction to obtain silicon carbide whiskers. Gas phase organic silicon compounds (methyl trichlorosilane) or a mixture of halogenated silicon and hydrocarbons are thermally decomposed in the presence of reducing gas at 1100~1500 ℃ to obtain high purity silicon carbide whiskers. Silicon nitride conversion method uses silicon nitride and carbon as raw materials, and reacts at a temperature of 1400~1900 ℃ in a non-oxidizing atmosphere of carbon monoxide to obtain silicon carbide whiskers. In addition, there is a method for reacting elemental silicon and hydrocarbons in the presence of hydrogen sulfide, and silicon carbide whiskers can also be obtained. The starting material of silicon carbide fiber is liquid dimethyldichlorosilane with a boiling point of 70 ℃. It interacts with sodium metal. In an inert organic solvent with a higher boiling point than sodium, sodium in the molten state is dispersed, and dimethyldichlorosilane is dropped in it, and polysilane is formed at the same time as the dehydrochloric acid reaction. When polysilane is heated to above 400 ℃ in an inert atmosphere, thermal transfer reaction and polymerization reaction occur to generate intermediate polycarbosilane. It is melt-spun into fiber. The obtained polycarbosilane fiber is subjected to high-temperature treatment in the calcination process, bridging reaction occurs due to oxygen in the air, heat treatment is usually carried out in a nitrogen atmosphere, and high-strength silicon carbide fiber is produced at a temperature of 1200 to 1500°C. The gas phase reaction method uses silicon tetrachloride, carbon tetrachloride and hydrogen as raw materials, and sends this mixed gas to an induction-heated substrate for crystallization growth to react, and at the same time, silicon carbide crystals are precipitated on the substrate. According to the conditions such as the concentration ratio of the reaction gas, the crystallization growth temperature, the flow rate of the transport gas, the type of the substrate for crystal growth, and the like, the precipitated crystal shape is changed. When SiCl4/CC14 = 1.4~1.8(mo1), crystallization growth temperature 1400~1500 ℃, hydrogen flow rate below 120cm/min, whisker crystals are obtained. Beyond this range, granular crystals or thin layers are formed on the surface. the silica carbonization reduction method mixes 1 part of silica powder with an average particle size of 0.01 μm (parts by weight, the same below) with 2 parts of carbon powder with an average particle size of 0.05 μm and 0.04 parts of microcrystalline mouth-shaped silicon carbide powder with an average particle size of 0.1 μm, then puts it into a graphite container, reacts at 1600 ℃ for 5 hours under argon flow (flow rate: 2 L/min), and then reacts in air, heat at 700 ℃ for 2h to remove residual carbon and prepare mouth-shaped silicon carbide powder product. Its SiO2 3C → SiC 2CO |
| toxic substance data | information provided by: pubchem.ncbi.nlm.nih.gov (external link) |
Last Update：2024-04-10 22:29:15
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